Discrete Semiconductor Products
UMT1NTN
ActiveRohm Semiconductor
PNP+PNP, SOT-363, GENERAL PURPOSE AMPLIFICATION TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
UMT1NTN
ActiveRohm Semiconductor
PNP+PNP, SOT-363, GENERAL PURPOSE AMPLIFICATION TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UMT1NTN |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 150 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 140 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Supplier Device Package | UMT6 |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 5166 | $ 0.42 | |
Description
General part information
UMT1N Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Documents
Technical documentation and resources