Discrete Semiconductor Products

AOB410L

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MOSFET N-CH 100V TO263

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Discrete Semiconductor Products

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MOSFET N-CH 100V TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB410L

Current - Continuous Drain (Id) @ 25°C	12 A, 150 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	129 nC
Input Capacitance (Ciss) (Max) @ Vds	7950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	333 W, 1.9 W
Rds On (Max) @ Id, Vgs [Max]	6.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOB410L	MOSFET (Metal Oxide)	N-Channel	12 A 150 A	1.9 W 333 W	6.5 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	25 V	100 V	Surface Mount	175 °C	-55 °C	TO-263 (D2PAK)	7 V 10 V	4 V	129 nC	7950 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 12A (Ta), 150A (Tc) 1.9W (Ta), 333W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources