Discrete Semiconductor Products

TSM025NB04CR RLG

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MOSFET N-CH 40V 24A/161A 8PDFN

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Discrete Semiconductor Products

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MOSFET N-CH 40V 24A/161A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM025NB04CR RLG

Current - Continuous Drain (Id) @ 25°C	161 A, 24 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	113 nC
Input Capacitance (Ciss) (Max) @ Vds	7150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 136 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)
Taiwan Semiconductor Corporation TSM025NB04CR RLG	113 nC	4 V	Surface Mount	24 A 161 A	10 V	7150 pF	8-PowerLDFN	8-PDFN	5.75	5.2	3.1 W 136 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	40 V	2.5 mOhm	N-Channel	20 V

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General part information

N-Channel 40 V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources