Discrete Semiconductor Products

TSM025NB04CR RLG

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MOSFETS 40V, 161A, SINGLE N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

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MOSFETS 40V, 161A, SINGLE N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	TSM025NB04CR RLG

Current - Continuous Drain (Id) @ 25°C	24 A, 161 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	113 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 136 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM025NB04CR RLG	113 nC	Surface Mount	8-PDFN	5.2	5.75	10 V	MOSFET (Metal Oxide)	20 V	3.1 W 136 W	40 V	2.5 mOhm	N-Channel	24 A 161 A	175 °C	-55 °C	7150 pF	8-PowerLDFN	4 V
Taiwan Semiconductor Corporation TSM220NB06LCR RLG		Surface Mount	8-PDFN	5.2	5.75	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	3.1 W 68 W	60 V	22 mOhm	N-Channel	8 A 35 A	175 °C	-55 °C		8-PowerLDFN	2.5 V	1314 pF	23 nC
Taiwan Semiconductor Corporation TSM130NB06CR RLG		Surface Mount	8-PDFN	5.2	5.75	10 V	MOSFET (Metal Oxide)	20 V	3.1 W 83 W	60 V	13 mOhm	N-Channel	10 A 51 A	175 °C	-55 °C	2380 pF	8-PowerLDFN	4 V		36 nC
Taiwan Semiconductor Corporation TSM280NB06LCR RLG	18 nC	Surface Mount	8-PDFN	5.2	5.75	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	3.1 W 56 W	60 V	28 mOhm	N-Channel	7 A 28 A	175 °C	-55 °C		8-PowerLDFN	2.5 V	969 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources