Discrete Semiconductor Products

GBPC12005-E4/51

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BRIDGE RECT 1P 50V 12A GBPC-W

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 50V 12A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC12005-E4/51

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	50 V

Part	Mounting Type	Technology	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Diode Type
Vishay General Semiconductor - Diodes Division GBPC12005-E4/51	Through Hole	Standard	12 A	GBPC-W	5 µA	50 V	-55 °C	150 °C	1.1 V	4-Square GBPC-W	Single Phase
Vishay General Semiconductor - Diodes Division GBPC12005W-E4/51	Through Hole	Standard	12 A	GBPC-W	5 µA	50 V	-55 °C	150 °C	1.1 V	4-Square GBPC-W	Single Phase

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General part information

Bridge Rectifier Single Phase Standard 50 V Through Hole GBPC-W

Technical documentation and resources