Discrete Semiconductor Products

2N3962 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 60VCBO 60VCEO 6.0VEBO 6.0PF

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 60VCBO 60VCEO 6.0VEBO 6.0PF

Technical Specifications

Parameters and characteristics for this part

Specification	2N3962 TIN/LEAD

Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case
Central Semiconductor Corp 2N3962 TIN/LEAD	PNP	100	TO-18	60 V	500 mV	40 MHz	Through Hole	10 nA	TO-18-3 Metal Can TO-206AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.46
Mouser	N/A	2000	$ 1.37
		4000	$ 1.35

General part information

BIPOLAR TRANSISTORS - BJT PNP 60VCBO 60VCEO 6.0VEBO 6.0PF

Technical documentation and resources

No documents available