Discrete Semiconductor Products

PJD60N04_L2_00001

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MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD60N04_L2_00001

Current - Continuous Drain (Id) @ 25°C	12.7 A, 60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1759 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	62 W, 2 W
Rds On (Max) @ Id, Vgs [Max]	6.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Technology	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Panjit International Inc. PJD60N04_L2_00001	150 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	40 V	17 nC	Surface Mount	12.7 A 60 A	TO-252AA	20 V	4.5 V 10 V	2 W 62 W	1759 pF	6.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.51
Mouser	N/A	3000	$ 0.41

General part information

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical documentation and resources