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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

IRL540NPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 36 A, 0.044 OHM, TO-220AB, THROUGH HOLE

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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

IRL540NPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 36 A, 0.044 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL540NPBF
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]140 W
Rds On (Max) @ Id, Vgs44 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 30066$ 1.77
Tube 1$ 1.92
10$ 1.23
100$ 0.83
500$ 0.66
1000$ 0.60
2000$ 0.56
5000$ 0.51

Description

General part information

IRL540 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources