HMC455LP3E
LTB½ WATT HIGH IP3 AMPLIFIER SMT, 1.7 - 2.5 GHZ
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HMC455LP3E
LTB½ WATT HIGH IP3 AMPLIFIER SMT, 1.7 - 2.5 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC455LP3E |
|---|---|
| Current - Supply | 150 mA |
| Frequency [Max] | 2.5 GHz |
| Frequency [Min] | 1.7 GHz |
| Gain | 13 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 6 dB |
| P1dB | 27.5 dBm |
| Package / Case | 16-VFQFN Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 16-QFN (3x3) |
| Test Frequency [Max] | 2.2 GHz |
| Test Frequency [Min] | 1.9 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 14.73 | <4d |
| 10 | $ 12.81 | |||
| 25 | $ 12.15 | |||
Description
General part information
HMC455 Series
The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.ApplicationsMulti-Carrier SystemsGSM, GPRS & EDGECDMA & WCDMAPHS
Documents
Technical documentation and resources