Discrete Semiconductor Products

U20DCT-E3/4W

Obsolete

DIODE ARRAY GP 200V 10A TO220-3

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 200V 10A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	U20DCT-E3/4W

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	15 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Current - Reverse Leakage @ Vr	Diode Configuration	Supplier Device Package	Package / Case	Mounting Type	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division U20DCT-E3/4W	Standard	15 µA	1 Pair Common Cathode	TO-220-3	TO-220-3	Through Hole	10 A	1 V	200 mA 500 ns	200 V	150 °C	-55 °C	80 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 200 V 10A Through Hole TO-220-3

Technical documentation and resources

No documents available