Integrated Circuits (ICs)

MAX626ESA+

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IC GATE DRVR LOW-SIDE 8SOIC

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Integrated Circuits (ICs)

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IC GATE DRVR LOW-SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	MAX626ESA+

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Low-Side
Gate Type	N-Channel, P-Channel MOSFET
Input Type	Inverting
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	25 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	4.5 V

Part	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Gate Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Qualification	Grade	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Analog Devices Inc./Maxim Integrated MAX626ESA+	Inverting	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in	Low-Side	2 A	2 A	Independent	N-Channel P-Channel MOSFET	85 °C	-40 °C	2	Surface Mount	20 ns	25 ns	8-SOIC
Analog Devices Inc./Maxim Integrated MAX626MJA/883B	Inverting	18 V	4.5 V	8-CDIP			Low-Side	2 A	2 A	Independent	N-Channel P-Channel MOSFET			2	Through Hole	20 ns	25 ns	8-CERDIP	MIL-STD-883	Military	7.62 mm	0.3 in	125 °C	-55 °C
Analog Devices Inc./Maxim Integrated MAX626CSA+T	Inverting	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in	Low-Side	2 A	2 A	Independent	N-Channel P-Channel MOSFET	70 °C	0 °C	2	Surface Mount	20 ns	25 ns	8-SOIC
Analog Devices Inc./Maxim Integrated MAX626EPA+	Inverting	18 V	4.5 V	8-DIP			Low-Side	2 A	2 A	Independent	N-Channel P-Channel MOSFET	85 °C	-40 °C	2	Through Hole	20 ns	25 ns	8-PDIP			7.62 mm	0.3 in
Analog Devices Inc./Maxim Integrated MAX626ESA+T	Inverting	18 V	4.5 V	8-SOIC	3.9 mm	0.154 in	Low-Side	2 A	2 A	Independent	N-Channel P-Channel MOSFET	85 °C	-40 °C	2	Surface Mount	20 ns	25 ns	8-SOIC

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General part information

Low-Side Gate Driver IC Inverting 8-SOIC

Technical documentation and resources