Discrete Semiconductor Products

SUM27N20-78-E3

Obsolete

MOSFET N-CH 200V 27A TO263

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 27A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM27N20-78-E3

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	150 W, 3.75 W
Rds On (Max)	0.078 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Technology	Package Name	Rds On (Max)	Power Dissipation (Max)
Vishay Dale SUM27N20-78-E3	N-Channel	6 V	10 V	4 V	-55 °C	175 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	27 A	20 V	2150 pF	Surface Mount	200 V	60 nC	MOSFET (Metal Oxide)	TO-263 (D2PAK)	0.078 Ohm	3.75 W 150 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 27A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources