Discrete Semiconductor Products

SI7317DN-T1-GE3

LTB

MOSFET P-CH 150V 2.8A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET P-CH 150V 2.8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7317DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	2.8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	9.8 nC
Input Capacitance (Ciss) (Max)	365 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Package Name	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Package / Case	FET Type	Mounting Type
Vishay Dale SI7317DN-T1-GE3	150 V	2.8 A	365 pF	9.8 nC	3.2 W 19.8 W	MOSFET (Metal Oxide)	4.5 V	PowerPAK® 1212-8	30 V	-55 °C	150 °C	6 V	10 V	1.2 Ohm	PowerPAK® 1212-8	P-Channel	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

P-Channel 150 V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources