Discrete Semiconductor Products

SIL3415-TP

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MOSFET P-CH 20V 4A SOT23-6L

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Discrete Semiconductor Products

Active

MOSFET P-CH 20V 4A SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL3415-TP

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.4 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]	Package / Case	Technology	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]
MCC (Micro Commercial Components) SIL3415-TP	20 V	Surface Mount	150 °C	-55 °C	SOT-23-6L	1 V	4 A	1.8 V	4.5 V	1.4 W	SOT-23-6	MOSFET (Metal Oxide)	P-Channel	50 mOhm	17.2 nC	1450 pF	8 V
MCC (Micro Commercial Components) SIL3415-TP	20 V	Surface Mount	150 °C	-55 °C	SOT-23-6L	1 V	4 A	1.8 V	4.5 V	1.4 W	SOT-23-6	MOSFET (Metal Oxide)	P-Channel	50 mOhm	17.2 nC	1450 pF	8 V

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General part information

P-Channel 20 V 4A (Ta) 1.4W Surface Mount SOT-23-6L

Technical documentation and resources