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SOT223
Discrete Semiconductor Products

PBHV8215Z,115

Active
Nexperia USA Inc.

150 V, 2 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

SOT223
Discrete Semiconductor Products

PBHV8215Z,115

Active
Nexperia USA Inc.

150 V, 2 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8215Z,115
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition33 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.45 W
QualificationAEC-Q100
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic280 mV
Voltage - Collector Emitter Breakdown (Max) [Max]150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.01

Description

General part information

PBHV8215Z Series

NPN high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.