Discrete Semiconductor Products

SI7411DN-T1-GE3

Obsolete

MOSFET P-CH 20V 7.5A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 7.5A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7411DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	7.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	41 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	19 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Vgs(th) (Max)	Power Dissipation (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Package Name	Gate Charge (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SI7411DN-T1-GE3	1 V	1.5 W	19 mOhm	20 V	8 V	P-Channel	7.5 A	Surface Mount	-55 °C	150 °C	PowerPAK® 1212-8	PowerPAK® 1212-8	41 nC	MOSFET (Metal Oxide)	4.5 V	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.43	30d+

3D models and CAD resources for this part

General part information

P-Channel 20 V 7.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources