Isolators

TLP781(D4-GRH,F)

Obsolete

Toshiba Semiconductor and Storage

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Isolators

TLP781(D4-GRH,F)

Obsolete

Toshiba Semiconductor and Storage

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLP781(D4-GRH,F)

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel [custom]	50 mA
Current Transfer Ratio (Max) [Max]	300 %
Current Transfer Ratio (Min)	150 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels [custom]	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-55 C
Output Type	Transistor
Package / Case	0.3 in
Package / Case	4-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ)	2 µs, 3 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V

TLP781 Series

Part	Input Type	Current Transfer Ratio (Min)	Voltage - Forward (Vf) (Typ)	Rise / Fall Time (Typ)	Turn On / Turn Off Time (Typ)	Current - Output / Channel [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - DC Forward (If) (Max) [Max]	Number of Channels [custom]	Mounting Type	Supplier Device Package	Output Type	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Max)	Vce Saturation (Max) [Max]	Current Transfer Ratio (Max) [Max]	Current Transfer Ratio (Min) [Min]
Toshiba Semiconductor and Storage TLP781(Y,F)	DC	50 %	1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Through Hole	4-DIP	Transistor	0.3 in	4-DIP	7.62 mm	150 %	400 mV
Toshiba Semiconductor and Storage TLP781(D4-GRH,F)	DC	150 %	1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Through Hole	4-DIP	Transistor	0.3 in	4-DIP	7.62 mm		400 mV	300 %
Toshiba Semiconductor and Storage TLP781(D4-GR-TP6,F	DC		1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing			400 mV	300 %	100 %
Toshiba Semiconductor and Storage TLP781(D4GRT6-SD,F	DC		1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Through Hole	4-DIP	Transistor	0.3 in	4-DIP	7.62 mm		400 mV	300 %	100 %
Toshiba Semiconductor and Storage TLP781(TELS-TP6,F)	DC	50 %	1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing			400 mV	600 %
Toshiba Semiconductor and Storage TLP781(D4-BL,F)	DC	200 %	1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Through Hole	4-DIP	Transistor	0.3 in	4-DIP	7.62 mm		400 mV	600 %
Toshiba Semiconductor and Storage TLP781(D4-Y-TP6,F)	DC	50 %	1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing		150 %	400 mV
Toshiba Semiconductor and Storage TLP781(GRL-LF6,F)	DC		1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing			400 mV	200 %	100 %
Toshiba Semiconductor and Storage TLP781(YH-TP6,F)	DC		1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing		150 %	400 mV		75 %
Toshiba Semiconductor and Storage TLP781(YH-LF6,F)	DC		1.15 V	2 µs 3 µs	3 µs	50 mA	-55 C	110 °C	60 mA	1	Surface Mount	4-SMD	Transistor		4-SMD Gull Wing		150 %	400 mV		75 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

TLP781 Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Documents

Technical documentation and resources