SI5479DU-T1-GE3

Obsolete

MOSFET P-CH 12V 16A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 16A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5479DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	3.1 W, 17.8 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type
Vishay General Semiconductor - Diodes Division SI5479DU-T1-GE3	PowerPAK® ChipFET™ Single	3.1 W 17.8 W	PowerPAK® ChipFET™ Single	12 V	1.8 V 4.5 V	-55 °C	150 °C	8 V	1 V	MOSFET (Metal Oxide)	51 nC	21 mOhm	16 A	Surface Mount	1810 pF	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 16A (Tc) 3.1W (Ta), 17.8W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources

No documents available