Specification	FDMB2307NZ

Configuration	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	800 mW
Supplier Device Package	6-MLP (2x3)
Technology	MOSFET (Metal Oxide)

FDMB2307NZ Series

Dual Common Drain N-Channel PowerTrench® MOSFET 20V , 9.7A, 16.5mΩ

Part	Technology	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	FET Feature
ON Semiconductor FDMB2307NZ	MOSFET (Metal Oxide)	800 mW	6-MLP (2x3)	28 nC	Surface Mount	-55 °C	150 °C	2 N-Channel (Dual) Common Drain	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.46
		10	$ 0.92
		100	$ 0.61
		500	$ 0.48
		1000	$ 0.44
	Digi-Reel®	1	$ 1.46
		10	$ 0.92
		100	$ 0.61
		500	$ 0.48
		1000	$ 0.44
	Tape & Reel (TR)	3000	$ 0.38
		6000	$ 0.35
		9000	$ 0.34
		15000	$ 0.34

Description

General part information

FDMB2307NZ Series

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).