Discrete Semiconductor Products

MCQ14P02-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ14P02-TP

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	47.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max) [Max]	3.1 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
MCC (Micro Commercial Components) MCQ14P02-TP	1 V	MOSFET (Metal Oxide)	8.5 mOhm	0.154 in	8-SOIC	3.9 mm	10 V	P-Channel	20 V	14 A	8-SOP	4500 pF	Surface Mount	3.1 W	2.5 V	4.5 V	47.6 nC	-55 C	150 °C
MCC (Micro Commercial Components) MCQ14P02-TP	1 V	MOSFET (Metal Oxide)	8.5 mOhm	0.154 in	8-SOIC	3.9 mm	10 V	P-Channel	20 V	14 A	8-SOP	4500 pF	Surface Mount	3.1 W	2.5 V	4.5 V	47.6 nC	-55 C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 14A 3.1W Surface Mount 8-SOP

Technical documentation and resources