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INFINEON S25FL064LABMFA001
Integrated Circuits (ICs)

S25FL127SABMFV000

LTB
INFINEON

NOR FLASH SERIAL (SPI, DUAL SPI, QUAD SPI) 3V/3.3V 128M-BIT 128M/64M/32M X 1/2-BIT/4-BIT 8NS 16-PIN SOIC W TRAY

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INFINEON S25FL064LABMFA001
Integrated Circuits (ICs)

S25FL127SABMFV000

LTB
INFINEON

NOR FLASH SERIAL (SPI, DUAL SPI, QUAD SPI) 3V/3.3V 128M-BIT 128M/64M/32M X 1/2-BIT/4-BIT 8NS 16-PIN SOIC W TRAY

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Technical Specifications

Parameters and characteristics for this part

SpecificationS25FL127SABMFV000
Clock Frequency108 MHz
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization16M x 8
Memory Size16 MB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case7.5 mm
Package / Case0.295 "
Supplier Device Package16-SOIC
TechnologyFLASH - NOR
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 480$ 2.97
720$ 2.94
960$ 2.87
1200$ 2.83
DigikeyN/A 2208$ 4.07
2208$ 4.07
5962$ 2.72
5962$ 2.72
30654$ 3.25
30654$ 3.25
Tray 1$ 3.58
1$ 3.58
10$ 3.18
10$ 3.18
25$ 3.03
25$ 3.03
40$ 2.96
40$ 2.96
80$ 2.86
80$ 2.86
230$ 2.71
230$ 2.71
440$ 2.62
440$ 2.62
945$ 2.51
945$ 2.51

Description

General part information

S25FL127 Series

S25FL127SABMFV000 is a S25FL127S non-volatile serial peripheral interface (SPI) flash memory IC using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65nm process lithography. This device connects to a host system via an SPI. Traditional SPI single bit serial input and output (single I/O or SIO) is supported as well as optional two bit (dual I/O or DIO) and four bit (quad I/O or QIO) serial commands. By using FL-S device at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. It offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.

Documents

Technical documentation and resources