Discrete Semiconductor Products

SMBT3904E6327HTSA1

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 330 MW, SOT-23, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 330 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SMBT3904E6327HTSA1

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Frequency - Transition	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]
INFINEON SMBT3904E6327HTSA1	300 MHz	NPN	PG-SOT23	50 nA	SC-59 SOT-23-3 TO-236-3	100	0.3 V	150 °C	330 mW	40 V	Surface Mount	200 mA
INFINEON SMBT3904E6433HTMA1	300 MHz	NPN	PG-SOT23	50 nA	SC-59 SOT-23-3 TO-236-3	100	0.3 V	150 °C	330 mW	40 V	Surface Mount	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The SMBT 3904 E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.

Technical documentation and resources