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onsemi-NTMFD001N03P9 MOSFETs Power MOSFET
Discrete Semiconductor Products

FDMS0300S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 49A, 1.8MΩ

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onsemi-NTMFD001N03P9 MOSFETs Power MOSFET
Discrete Semiconductor Products

FDMS0300S

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 49A, 1.8MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS0300S
Current - Continuous Drain (Id) @ 25°C49 A, 31 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]133 nC
Input Capacitance (Ciss) (Max) @ Vds8705 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 96 W
Rds On (Max) @ Id, Vgs1.8 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.47
10$ 1.59
100$ 1.09
500$ 0.87
1000$ 0.80
Digi-Reel® 1$ 2.47
10$ 1.59
100$ 1.09
500$ 0.87
1000$ 0.80
Tape & Reel (TR) 3000$ 0.72
NewarkEach (Supplied on Full Reel) 3000$ 0.96
6000$ 0.87
12000$ 0.78
18000$ 0.75
30000$ 0.74
ON SemiconductorN/A 1$ 0.67

Description

General part information

FDMS0300S Series

The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.