
Discrete Semiconductor Products
IRF7904TRPBF
LTBINFINEON
IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 10.8 MOHM;
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Discrete Semiconductor Products
IRF7904TRPBF
LTBINFINEON
IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 10.8 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7904TRPBF |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6 A, 11 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 910 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power - Max | 1.4 W, 2 W |
| Rds On (Max) @ Id, Vgs | 16.2 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF7904 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources