Discrete Semiconductor Products

IRF7350TRPBF

Obsolete

MOSFET N/P-CH 100V 2.1A/1.5A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 100V 2.1A/1.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7350TRPBF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.1 A, 1.5 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology
INFINEON IRF7350TRPBF	4 V	1.5 A 2.1 A	Surface Mount	100 V	28 nC	380 pF	N and P-Channel	2 W	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	210 mOhm	8-SO	MOSFET (Metal Oxide)
INFINEON IRF7350PBF	4 V	1.5 A 2.1 A	Surface Mount	100 V	28 nC	380 pF	N and P-Channel	2 W	150 °C	-55 °C	0.154 in	8-SOIC	3.9 mm	210 mOhm	8-SO	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00