Discrete Semiconductor Products

EPC2367ENGRT

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TRANS GAN 100V .0012OHM 5QFN

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Discrete Semiconductor Products

Active

TRANS GAN 100V .0012OHM 5QFN

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2367ENGRT

Current - Continuous Drain (Id) @ 25°C	78 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2170 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	5-PowerWQFN
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	5-QFN (3.3x3.3)
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3452	$ 6.89

General part information

TRANS GAN 100V .0012OHM 5QFN

Technical documentation and resources