Discrete Semiconductor Products

AOD950A70

NRND

MOSFET N-CH 700V 5A TO252

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET N-CH 700V 5A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD950A70

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	56.5 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.1 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Alpha & Omega Semiconductor Inc. AOD950A70	DPAK (2 Leads + Tab) SC-63 TO-252-3	950 mOhm	56.5 W	20 V	5 A	TO-252 (DPAK)	10 V	4.1 V	N-Channel	150 °C	-55 °C	Surface Mount	MOSFET (Metal Oxide)	700 V	10 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 5A (Tc) 56.5W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available