Discrete Semiconductor Products

SICW1000N170A-BP

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N-CHANNEL MOSFET,TO-247AB

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-247AB

Technical Specifications

Parameters and characteristics for this part

Specification	SICW1000N170A-BP

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	124 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	69 W
Rds On (Max) @ Id, Vgs	1.32 Ohm
Supplier Device Package	TO-247AB
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
MCC (Micro Commercial Components) SICW1000N170A-BP	SiC (Silicon Carbide Junction Transistor)	TO-247AB	69 W	15 V 20 V	25 V	-5 V	1700 V	Through Hole	124 pF	N-Channel	15.5 nC	150 °C	-55 °C	3 A	TO-247-3	4.5 V	1.32 Ohm
MCC (Micro Commercial Components) SICW1000N170A-BP		TO-247AB	69 W	15 V 20 V	25 V	-5 V	1700 V	Through Hole	124 pF	N-Channel	15.5 nC	150 °C	-55 °C	3 A	TO-247-3	4.5 V	1.32 Ohm

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General part information

N-Channel 1700 V 3A 69W Through Hole TO-247AB

Technical documentation and resources