Zenode.ai Logo
Beta
2ED2108S06FXUMA1
Integrated Circuits (ICs)

2ED2108S06FXUMA1

Active
INFINEON

THE 2ED2108S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE)

Deep-Dive with AI

Search across all available documentation for this part.

2ED2108S06FXUMA1
Integrated Circuits (ICs)

2ED2108S06FXUMA1

Active
INFINEON

THE 2ED2108S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2ED2108S06FXUMA1
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]290 mA
Current - Peak Output (Source, Sink) [custom]700 mA
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]650 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.7 V
Logic Voltage - VIL, VIH [custom]1.1 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]100 ns
Supplier Device PackagePG-DSO-8-53
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.96
10$ 0.86
25$ 0.81
100$ 0.67
250$ 0.62
500$ 0.55
1000$ 0.51
Digi-Reel® 1$ 0.96
10$ 0.86
25$ 0.81
100$ 0.67
250$ 0.62
500$ 0.55
1000$ 0.51
N/A 12087$ 1.19
Tape & Reel (TR) 2500$ 0.51
NewarkEach (Supplied on Cut Tape) 1$ 0.97
10$ 0.71
25$ 0.67
50$ 0.62
100$ 0.57

Description

General part information

2ED2108 Series

650 Vhalf-bridgehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available:2ED21084S06J. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources