Discrete Semiconductor Products

ALD110802PCL

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MOSFETS QUAD EPAD(R) N-CH

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Discrete Semiconductor Products

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MOSFETS QUAD EPAD(R) N-CH

Technical Specifications

Parameters and characteristics for this part

Specification	ALD110802PCL

Configuration	4 N-Channel, Matched Pair
Drain to Source Voltage (Vdss)	10.6 V
Input Capacitance (Ciss) (Max) @ Vds	2.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	16-DIP
Package / Case [x]	0.3 in
Package / Case [x]	7.62 mm
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	500 Ohm
Supplier Device Package	16-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	220 mV

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Package / Case [x]	Package / Case	Package / Case [x]	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology
Advanced Linear Devices Inc. ALD110802PCL	Through Hole	70 °C	0 °C	4 N-Channel Matched Pair	0.3 in	16-DIP	7.62 mm	16-PDIP	500 mW	500 Ohm	10.6 V	2.5 pF	220 mV	MOSFET (Metal Oxide)

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General part information

MOSFETS QUAD EPAD(R) N-CH

Technical documentation and resources