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ALD110802PCL
Discrete Semiconductor Products

ALD110802PCL

Active
Advanced Linear Devices Inc.

MOSFETS QUAD EPAD(R) N-CH

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ALD110802PCL
Discrete Semiconductor Products

ALD110802PCL

Active
Advanced Linear Devices Inc.

MOSFETS QUAD EPAD(R) N-CH

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationALD110802PCL
Channel Count4
ConfigurationMatched Pair, N-Channel
Drain to Source Voltage (Vdss)10.6 V
Input Capacitance (Ciss) (Max)2.5 pF
Mounting TypeThrough Hole
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package Length0.3 in
Package Name16-DIP, 16-PDIP
Package Width7.62 mm
Power - Max0.5 W
Rds On (Max)500 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)220 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 5.051m+
MouserN/A 50$ 5.601m+
100$ 4.96
250$ 4.67
500$ 4.44
1000$ 4.23
2500$ 4.17

CAD

3D models and CAD resources for this part

Description

General part information

ALD110802P Series

MOSFETS QUAD EPAD(R) N-CH

Documents

Technical documentation and resources