Discrete Semiconductor Products

RFP15N05L

Obsolete

MOSFET N-CH 50V 15A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 50V 15A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	RFP15N05L

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor RFP15N05L	-55 °C	150 °C	TO-220-3	10 V	N-Channel	60 W	15 A	50 V	900 pF	TO-220-3	MOSFET (Metal Oxide)	Through Hole	140 mOhm	2 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 15A (Tc) 60W (Tc) Through Hole TO-220-3

Technical documentation and resources