Discrete Semiconductor Products

VS-3ECH01HM3/9AT

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DIODE GEN PURP 100V 3A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-3ECH01HM3/9AT

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AB, SMC
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	0.9 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed [Min]	Grade	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Qualification
Vishay General Semiconductor - Diodes Division VS-3ECH01HM3/9AT	0.9 V	3 A	DO-214AB SMC	100 V	175 ░C	-55 °C	Standard	200 mA 500 ns	Automotive	2 µA	DO-214AB (SMC)	Surface Mount	AEC-Q101

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General part information

Diode 100 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources