Zenode.ai Logo
Beta
INFINEON IAUT165N08S5N029ATMA2
Discrete Semiconductor Products

IPT026N10N5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TOLL HSOF-8 PACKAGE; 2.6 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

INFINEON IAUT165N08S5N029ATMA2
Discrete Semiconductor Products

IPT026N10N5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TOLL HSOF-8 PACKAGE; 2.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT026N10N5ATMA1
Current - Continuous Drain (Id) @ 25°C27 A, 202 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]214 W
Rds On (Max) @ Id, Vgs2.6 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.99
10$ 2.51
100$ 2.03
500$ 1.99
Digi-Reel® 1$ 2.99
10$ 2.51
100$ 2.03
500$ 1.99
N/A 3021$ 4.26
Tape & Reel (TR) 2000$ 1.99
MouserN/A 1$ 3.60
10$ 2.68
25$ 2.50
100$ 1.99
500$ 1.63
1000$ 1.52
2000$ 1.47
NewarkEach (Supplied on Cut Tape) 1$ 3.74
10$ 2.77
25$ 2.61
50$ 2.34
100$ 2.07
250$ 2.03
500$ 1.99

Description

General part information

IPT026 Series

Infineon’sOptiMOS™ 5 100Vn-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load),forklift,light electric vehicles (LEV)andtelecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.

Documents

Technical documentation and resources