Discrete Semiconductor Products

IPW90R340C3XKSA1

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MOSFET N-CH 900V 15A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 900V 15A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW90R340C3XKSA1

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	PG-TO247-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPW90R340C3XKSA1	3.5 V	340 mOhm	900 V	208 W	MOSFET (Metal Oxide)	15 A	Through Hole	94 nC	PG-TO247-3-21	150 °C	-55 °C	20 V	10 V	N-Channel	TO-247-3	2400 pF

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General part information

N-Channel 900 V 15A (Tc) 208W (Tc) Through Hole PG-TO247-3-21

Technical documentation and resources