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Mill-Max-316-93-133-61-001000 Connector Headers and PCB Receptacles Conn Socket Strip SKT 33 POS 2.54mm Solder ST Thru-Hole
RF and Wireless

HMC787ALC3BTR-R5

Active
Analog Devices Inc./Maxim Integrated

GAAS, MMIC, FUNDAMENTAL MIXER, 3 GHZ TO 10 GHZ

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Mill-Max-316-93-133-61-001000 Connector Headers and PCB Receptacles Conn Socket Strip SKT 33 POS 2.54mm Solder ST Thru-Hole
RF and Wireless

HMC787ALC3BTR-R5

Active
Analog Devices Inc./Maxim Integrated

GAAS, MMIC, FUNDAMENTAL MIXER, 3 GHZ TO 10 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC787ALC3BTR-R5
Frequency [Max]10 GHz
Frequency [Min]3 GHz
Mounting TypeSurface Mount
Noise Figure9 dB
Number of Mixers1
Package / Case12-CLCC Exposed Pad
Supplier Device Package12-CLCC
Supplier Device Package [x]2.9
Supplier Device Package [y]2.9

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 53.841m+

Description

General part information

HMC787A Series

HMC787ALC3BThe HMC787A is a general-purpose, double balanced mixer in a 12-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package that can be used as an upconverter or down- converter from 3 GHz to 10 GHz. This mixer is fabricated in a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry. The HMC787A provides excellent local oscillator (LO) to radio frequency (RF) and LO to intermediate frequency (IF) isolation due to optimized balun structures and operates with a LO drive level of 17 dBm. The ceramic LCC package eliminates the need for wire bonding and is compatible with high volume, surface-mount manufacturing techniques.HMC787AG (CHIP)The HMC787AG is a general-purpose, double balanced mixer that can be used as an upconverter or downconverter from 3 GHz to 10 GHz. This mixer is fabricated in a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry.The HMC787AG provides high local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures and operates with a LO drive level between 13 dBm to 21 dBm.ApplicationsMicrowave RadioIndustrial, scientific, and medical (ISM) band and ultrawide band (UWB) radioTest equipment & sensorsMilitary end use