Discrete Semiconductor Products

SIHF16N50C-E3

LTB

MOSFET N-CH 500V 16A TO220

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 16A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF16N50C-E3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1900 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	38 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	FET Type	Package Name	Power Dissipation (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Gate Charge (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package / Case
Vishay Dale SIHF16N50C-E3	N-Channel	TO-220 Full Pack	38 W	5 V	-55 °C	150 °C	Through Hole	68 nC	30 V	10 V	16 A	MOSFET (Metal Oxide)	500 V	380 mOhm	1900 pF	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.90	1m+
	Tape & Reel (TR)	1000	$ 3.21	1m+
		2000	$ 3.02

3D models and CAD resources for this part

General part information

N-Channel 500 V 16A (Tc) 38W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources