Specification	NTTFD022N10C

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24 A, 6 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	585 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerWQFN
Power - Max [Max]	1.7 W, 26 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	12-WQFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

NTTFD022N10C Series

MOSFET, Power, 100V POWERTRENCH® Power Clip Half Bridge Configuration

Part	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTTFD022N10C	25 mOhm	2 N-Channel (Dual)	585 pF	1.7 W 26 W	9 nC	Surface Mount	12-PowerWQFN	4 V	12-WQFN (3.3x3.3)	MOSFET (Metal Oxide)	100 V	6 A 24 A	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, 80V POWERTRENCH® Power Clip Symmetric Dual N-Channel, 21mΩ @ 10V, 24A, WQFN12 3.3x3.3mm