Discrete Semiconductor Products

AIMBG75R016M1HXTMA1

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INFINEON

THE COOLSIC™ MOSFET 750 V IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST SYSTEM PERFORMANCE AND RELIABILITY.

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Search across all available documentation for this part.

DocumentsAIMBG75R016M1HXTMA1 | Datasheet

Discrete Semiconductor Products

AIMBG75R016M1HXTMA1

Active

INFINEON

THE COOLSIC™ MOSFET 750 V IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST SYSTEM PERFORMANCE AND RELIABILITY.

Deep-Dive with AI

DocumentsAIMBG75R016M1HXTMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AIMBG75R016M1HXTMA1

Current - Continuous Drain (Id) @ 25°C	98 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	81 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2869 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	384 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5.6 V

G1 Series

Part	Vgs(th) (Max) @ Id	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON AIMBG75R016M1HXTMA1	5.6 V	AEC-Q101	750 V	15 mOhm	N-Channel	PG-TO263-7-12	25 V	-10 V	15 V 20 V	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	384 W	175 °C	-55 °C	2869 pF	Automotive	98 A	81 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	724	$ 19.97
Mouser	N/A	1	$ 18.94
		10	$ 13.52
		100	$ 11.67
		1000	$ 10.97
Newark	Each (Supplied on Cut Tape)	1	$ 20.33
		10	$ 14.90
		25	$ 14.16
		50	$ 13.44
		100	$ 12.70
		250	$ 12.39
		500	$ 12.06
		1000	$ 11.75

Description

General part information

G1 Series

TheCoolSiC™ MOSFET750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

Documents

Technical documentation and resources

AIMBG75R016M1HXTMA1 | Datasheet

Datasheet