Zenode.ai Logo
Beta
PG-T0263-3
Discrete Semiconductor Products

IPB200N15N3GATMA1

Obsolete
INFINEON

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

PG-T0263-3
Discrete Semiconductor Products

IPB200N15N3GATMA1

Obsolete
INFINEON

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB200N15N3GATMA1
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1820 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs20 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 1.28
2000$ 1.25
DigikeyCut Tape (CT) 1$ 3.54
10$ 2.31
100$ 1.62
500$ 1.32
N/A 0$ 0.00
Tape & Reel (TR) 1000$ 1.22
2000$ 1.19
NewarkEach 1$ 3.68
10$ 2.40
100$ 1.68
500$ 1.37

Description

General part information

IPB200 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources