Integrated Circuits (ICs)

IRS21281PBF

Obsolete

BUFFER/INVERTER BASED MOSFET DRI

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Integrated Circuits (ICs)

Obsolete

BUFFER/INVERTER BASED MOSFET DRI

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21281PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	High-Side
Gate Type	IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	40 ns
Rise / Fall Time (Typ) [custom]	80 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

Part	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Mounting Type	Input Type	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Channel Type	Number of Drivers	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IRS21281PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	600 V	8-DIP (0.300" 7.62mm)	600 mA	290 mA	0.8 V 2.5 V	Through Hole	Inverting	High-Side	40 ns	80 ns	20 V	9 V	Single	1	8-PDIP	-40 °C	150 °C
INFINEON IRS21281PBF	IGBT MOSFET (N-Channel)	600 V	8-DIP (0.300" 7.62mm)	600 mA	290 mA	0.8 V 2.5 V	Through Hole	Inverting	High-Side	40 ns	80 ns	20 V	9 V	Single	1	8-PDIP	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side Gate Driver IC Inverting 8-PDIP

Technical documentation and resources