Discrete Semiconductor Products

IPA90R340C3XKSA2

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MOSFET, N-CH, 900V, 15A, 150DEG C, 35W

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 900V, 15A, 150DEG C, 35W

Technical Specifications

Parameters and characteristics for this part

Specification	IPA90R340C3XKSA2

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	340 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)
INFINEON IPA90R340C3XKSA2	PG-TO220-FP	N-Channel	94 nC	10 V	900 V	3.5 V	2400 pF	15 A	20 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	150 °C	-55 °C	340 mOhm	Through Hole	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources