Discrete Semiconductor Products

IRF8302MTR1PBF

Obsolete

MOSFET N CH 30V 31A MX

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N CH 30V 31A MX

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8302MTR1PBF

Current - Continuous Drain (Id) @ 25°C	31 A, 190 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	104 W, 2.8 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF8302MTR1PBF	4.5 V 10 V	MOSFET (Metal Oxide)	31 A 190 A	2.8 W 104 W	DirectFET™ Isometric MX	6030 pF	DIRECTFET™ MX	Surface Mount	30 V	-40 °C	150 °C	20 V	2.35 V	N-Channel	1.8 mOhm	53 nC
INFINEON IRF8302MTRPBF	4.5 V 10 V	MOSFET (Metal Oxide)	31 A 190 A	2.8 W 104 W	DirectFET™ Isometric MX	6030 pF	DIRECTFET™ MX	Surface Mount	30 V	-40 °C	150 °C	20 V	2.35 V	N-Channel	1.8 mOhm	53 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 30 V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources