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Infineon Technologies AG-BCR573E6433HTMA1 Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

BAT6806E6327HTSA1

Obsolete
INFINEON

DIODE RF SCHOTTKY 8V 150MW 3-PIN SOT-23 T/R

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Infineon Technologies AG-BCR573E6433HTMA1 Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

BAT6806E6327HTSA1

Obsolete
INFINEON

DIODE RF SCHOTTKY 8V 150MW 3-PIN SOT-23 T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT6806E6327HTSA1
Capacitance @ Vr, F1 pF
Current - Max [Max]130 mA
Diode TypeSchottky - 1 Pair Common Anode
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]150 mW
Resistance @ If, F10 Ohm
Supplier Device PackagePG-SOT23
Voltage - Peak Reverse (Max) [Max]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

BAT6806 Series

RF Diode Schottky - 1 Pair Common Anode 8V 130 mA 150 mW PG-SOT23

Documents

Technical documentation and resources