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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN3R0-30YLDX

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Nexperia USA Inc.

N-CHANNEL 30 V, 3.0 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Trans MOSFET N-CH 40V 100A 4-Pin LFPAK-56 T/R
Discrete Semiconductor Products

PSMN3R0-30YLDX

Active
Nexperia USA Inc.

N-CHANNEL 30 V, 3.0 MΩ LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN3R0-30YLDX
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2939 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Rds On (Max) @ Id, Vgs3.1 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 33011$ 1.97

Description

General part information

PSMN3R0-30YLD Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.