
Discrete Semiconductor Products
BC68PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 20 V, 2 A NPN MEDIUM POWER TRANSISTORS
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Discrete Semiconductor Products
BC68PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 20 V, 2 A NPN MEDIUM POWER TRANSISTORS
Technical Specifications
Parameters and characteristics for this part
| Specification | BC68PA,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 85 |
| Frequency - Transition | 170 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-PowerUDFN |
| Power - Max [Max] | 420 mW |
| Supplier Device Package | 3-HUSON |
| Supplier Device Package [x] | 2 |
| Supplier Device Package [y] | 2 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 0.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC68PA Series
NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA.
Documents
Technical documentation and resources