Discrete Semiconductor Products

HER608GP-TP

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DIODE STANDARD 1000V 6A R6

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Discrete Semiconductor Products

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DIODE STANDARD 1000V 6A R6

Technical Specifications

Parameters and characteristics for this part

Specification	HER608GP-TP

Capacitance @ Vr, F	65 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Reverse Recovery Time (trr)	75 ns
Speed	500 ns, 200 mA
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	6 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
MCC (Micro Commercial Components) HER608GP-TP	200 mA 500 ns	10 çA	65 pF	Through Hole	6 A	-55 °C	150 °C	1.7 V	6 A	75 ns	R-6	R-6 Axial	Standard	1000 V
MCC (Micro Commercial Components) HER608-TP	200 mA 500 ns	10 çA	65 pF	Through Hole	6 A	-55 °C	150 °C	1.7 V	6 A	75 ns	R-6	R-6 Axial	Standard	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 6A Through Hole R-6

Technical documentation and resources