Specification	PSMN059-150Y,115

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1529 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	113 W
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN059-150Y Series

N-channel TrenchMOS SiliconMAX standard level FET

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
Nexperia USA Inc. PSMN059-150Y,115	150 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	1529 pF	10 V	SC-100 SOT-669	Surface Mount	N-Channel	150 °C	-55 °C	43 A	59 mOhm	113 W	27.9 nC	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.26

Description

General part information

PSMN059-150Y Series

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.