Discrete Semiconductor Products

IPP50R199CPXKSA1

LTB

MOSFET N-CH 550V 17A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 550V 17A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP50R199CPXKSA1

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	139 W
Rds On (Max) @ Id, Vgs [Max]	199 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]
INFINEON IPP50R199CPXKSA1	150 °C	-55 °C	PG-TO220-3-1	17 A	20 V	1800 pF	45 nC	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	139 W	199 mOhm	Through Hole	550 V	3.5 V

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General part information

N-Channel 550 V 17A (Tc) 139W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available