Discrete Semiconductor Products

IRD3CH9DB6

Obsolete

DIODE GEN PURP 1.2KV 10A DIE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 1.2KV 10A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	IRD3CH9DB6

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Reverse Recovery Time (trr)	154 ns
Speed	500 ns, 200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	2.7 V

Part	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
INFINEON IRD3CH9DB6	Die	10 A	154 ns	Surface Mount	200 nA	200 mA 500 ns	Die	1.2 kV	Standard	2.7 V	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 1200 V 10A Surface Mount Die

Technical documentation and resources

No documents available