Integrated Circuits (ICs)

CY62167ELL-45ZXI

Active

INFINEON

SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 2M X 8BIT / 1M X 16BIT, TSOP-I, 48 PINS, 4.5 V

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DocumentsDatasheet Technical Data Sheet EN

Integrated Circuits (ICs)

CY62167ELL-45ZXI

Active

INFINEON

SRAM, ASYNCHRONOUS SRAM, 16 MBIT, 2M X 8BIT / 1M X 16BIT, TSOP-I, 48 PINS, 4.5 V

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DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY62167ELL-45ZXI

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	2M x 8, 1M x 16
Memory Size	2 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	48-TFSOP
Package / Case [x]	0.724 in
Package / Case [y]	18.4 mm
Supplier Device Package	48-TSOP I
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

CY62167 Series

Part	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Memory Format	Access Time	Memory Organization	Memory Type	Memory Interface	Memory Size	Voltage - Supply [Max]	Voltage - Supply [Min]	Write Cycle Time - Word, Page	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Supplier Device Package [x]	Supplier Device Package [y]	Memory Organization
INFINEON CY62167G18-55ZXIT	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	55 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	2.2 V	1.65 V	55 ns
INFINEON CY62167ELL-45ZXI	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	45 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	5.5 V	4.5 V		45 ns	45 ns
INFINEON CY62167EV30LL-45ZXIT	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	45 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	3.6 V	2.2 V		45 ns	45 ns
INFINEON CY62167ESL-55FNXIT	60-WLCSP	SRAM - Asynchronous	85 C	-40 ¯C	60-UFBGA WLCSP			Surface Mount	SRAM	55 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	1.95 V	1.65 V	55 ns			5.81	4.65
INFINEON CY62167EV30LL-45BVXAT	48-VFBGA (6x8)	SRAM - Asynchronous	85 C	-40 ¯C	48-VFBGA			Surface Mount	SRAM	45 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	3.6 V	2.2 V		45 ns	45 ns
INFINEON CY62167G30-55ZXE	48-TSOP I	SRAM - Asynchronous	125 °C	-40 °C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	55 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	3.6 V	2.2 V	55 ns
INFINEON CY62167ELL-45ZXI	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	45 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	5.5 V	4.5 V		45 ns	45 ns
INFINEON CY62167DV30LL-55ZXIT	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	55 ns		Volatile	Parallel	2 MB	3.6 V	2.2 V	55 ns					1 M
INFINEON CY62167EV18LL-55BVI	48-VFBGA (6x8)	SRAM - Asynchronous	85 C	-40 ¯C	48-VFBGA			Surface Mount	SRAM	55 ns		Volatile	Parallel	2 MB	2.25 V	1.65 V	55 ns					1 M
INFINEON CY62167EV30LL-45ZXA	48-TSOP I	SRAM - Asynchronous	85 C	-40 ¯C	48-TFSOP	18.4 mm	0.724 in	Surface Mount	SRAM	45 ns	1M x 16 2M x 8	Volatile	Parallel	2 MB	3.6 V	2.2 V		45 ns	45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 9.49
Digikey	Bulk	26	$ 11.92
		26	$ 11.92
	N/A	193	$ 16.15
		193	$ 16.15
		227	$ 13.56
		227	$ 13.56
		302	$ 9.40
		302	$ 9.40
	Tray	1	$ 15.71
		1	$ 15.71
		10	$ 14.54
		10	$ 14.54
		25	$ 14.34
		25	$ 14.34
		40	$ 14.16
		40	$ 14.16
		96	$ 12.41
		96	$ 12.41
		288	$ 11.88
		288	$ 11.88
		480	$ 11.80
		480	$ 11.80
Newark	Each	1	$ 13.26
		10	$ 12.67
		25	$ 12.00
		50	$ 11.49
		100	$ 11.35
		250	$ 11.19
		500	$ 10.36

Description

General part information

CY62167 Series

CY62167ELL-45ZXI is a high-performance CMOS static RAM organized as 1M words by 16 bits/2M words by 8 bits. This device features an advanced circuit design to provide an ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. This device also has an automatic power down feature that reduces power consumption when addresses are not toggling. To write to the device, take chip enables (active-low CE1 LOW and CE2 HIGH) and write enable (active-low WE) input LOW. If byte low enable (active-low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (active-low BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).