Discrete Semiconductor Products

1N5822-E3/73

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DIODE SCHOTTKY 40V 3A DO201AD

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Discrete Semiconductor Products

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DIODE SCHOTTKY 40V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5822-E3/73

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	525 mV

Part	Package / Case	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Vishay General Semiconductor - Diodes Division 1N5822-E3/73	DO-201AD Axial	Through Hole	Schottky	40 V	DO-201AD	3 A	200 mA 500 ns	2 mA	525 mV	-65 C	125 °C
Vishay General Semiconductor - Diodes Division 1N5822-E3/51	DO-201AD Axial	Through Hole	Schottky	40 V	DO-201AD	3 A	200 mA 500 ns	2 mA	525 mV	-65 C	125 °C

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General part information

Diode 40 V 3A Through Hole DO-201AD

Technical documentation and resources